Annealing-induced-type conversion of GaInNAs
Identifieur interne : 00A740 ( Main/Repository ); précédent : 00A739; suivant : 00A741Annealing-induced-type conversion of GaInNAs
Auteurs : RBID : Pascal:04-0097142Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
When grown by metalorganic chemical vapor deposition (MOCVD), nominally undoped GaInNAs is commonly observed to have an acceptor concentration of ∼1017cm-3. However, after annealing in the MOCVD reactor at a temperature of 650°C, p-type GaInNAs sometimes converts to n type with an electron concentration of ∼1017cm-3. This n-type material has a slightly higher electron mobility (∼400-450 cm2/Vs) than has usually been reported for 1 eV GaInNAs. Secondary ion mass spectroscopy shows significant hydrogen and some carbon contamination of these layers. The type conversion is correlated with both the nitrogen and hydrogen concentration and is relatively insensitive to the choice of growth precursors (trimethylgallium versus triethylgallium, or unsymmetric dimethylhydrazine versus nitrogen trifluoride). The data are consistent with theoretical predictions that the donors arise from a N-H complex. Annealing in the absence of hydrogen reduces the background acceptor concentration, but does not produce an electron concentration as high as 1017cm-3. © 2004 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00BE84
Links to Exploration step
Pascal:04-0097142Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Annealing-induced-type conversion of GaInNAs</title><author><name sortKey="Kurtz, Sarah" uniqKey="Kurtz S">Sarah Kurtz</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401-3393</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden</wicri:cityArea></affiliation></author><author><name sortKey="Geisz, J F" uniqKey="Geisz J">J. F. Geisz</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401-3393</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden</wicri:cityArea></affiliation></author><author><name sortKey="Friedman, D J" uniqKey="Friedman D">D. J. Friedman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401-3393</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden</wicri:cityArea></affiliation></author><author><name sortKey="Metzger, W K" uniqKey="Metzger W">W. K. Metzger</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401-3393</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden</wicri:cityArea></affiliation></author><author><name sortKey="King, R R" uniqKey="King R">R. R. King</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401-3393</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden</wicri:cityArea></affiliation></author><author><name sortKey="Karam, N H" uniqKey="Karam N">N. H. Karam</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401-3393</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0097142</idno><date when="2004-03-01">2004-03-01</date><idno type="stanalyst">PASCAL 04-0097142 AIP</idno><idno type="RBID">Pascal:04-0097142</idno><idno type="wicri:Area/Main/Corpus">00BE84</idno><idno type="wicri:Area/Main/Repository">00A740</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Carrier density</term><term>Electron mobility</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD</term><term>Secondary ion mass spectra</term><term>Semiconductor growth</term><term>Semiconductor thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6172C</term><term>8115G</term><term>7220F</term><term>7361E</term><term>7220J</term><term>7920R</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Croissance semiconducteur</term><term>Méthode MOCVD</term><term>Recuit</term><term>Mobilité électron</term><term>Densité porteur charge</term><term>Spectre SIMS</term><term>Couche mince semiconductrice</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">When grown by metalorganic chemical vapor deposition (MOCVD), nominally undoped GaInNAs is commonly observed to have an acceptor concentration of ∼10<sup>17</sup>cm<sup>-3</sup>. However, after annealing in the MOCVD reactor at a temperature of 650°C, p-type GaInNAs sometimes converts to n type with an electron concentration of ∼10<sup>17</sup>cm<sup>-3</sup>. This n-type material has a slightly higher electron mobility (∼400-450 cm2/Vs) than has usually been reported for 1 eV GaInNAs. Secondary ion mass spectroscopy shows significant hydrogen and some carbon contamination of these layers. The type conversion is correlated with both the nitrogen and hydrogen concentration and is relatively insensitive to the choice of growth precursors (trimethylgallium versus triethylgallium, or unsymmetric dimethylhydrazine versus nitrogen trifluoride). The data are consistent with theoretical predictions that the donors arise from a N-H complex. Annealing in the absence of hydrogen reduces the background acceptor concentration, but does not produce an electron concentration as high as 10<sup>17</sup>cm<sup>-3</sup>. © 2004 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>95</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Annealing-induced-type conversion of GaInNAs</s1></fA08><fA11 i1="01" i2="1"><s1>KURTZ (Sarah)</s1></fA11><fA11 i1="02" i2="1"><s1>GEISZ (J. F.)</s1></fA11><fA11 i1="03" i2="1"><s1>FRIEDMAN (D. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>METZGER (W. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>KING (R. R.)</s1></fA11><fA11 i1="06" i2="1"><s1>KARAM (N. H.)</s1></fA11><fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401-3393</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>2505-2508</s1></fA20><fA21><s1>2004-03-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0097142</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>When grown by metalorganic chemical vapor deposition (MOCVD), nominally undoped GaInNAs is commonly observed to have an acceptor concentration of ∼10<sup>17</sup>cm<sup>-3</sup>. However, after annealing in the MOCVD reactor at a temperature of 650°C, p-type GaInNAs sometimes converts to n type with an electron concentration of ∼10<sup>17</sup>cm<sup>-3</sup>. This n-type material has a slightly higher electron mobility (∼400-450 cm2/Vs) than has usually been reported for 1 eV GaInNAs. Secondary ion mass spectroscopy shows significant hydrogen and some carbon contamination of these layers. The type conversion is correlated with both the nitrogen and hydrogen concentration and is relatively insensitive to the choice of growth precursors (trimethylgallium versus triethylgallium, or unsymmetric dimethylhydrazine versus nitrogen trifluoride). The data are consistent with theoretical predictions that the donors arise from a N-H complex. Annealing in the absence of hydrogen reduces the background acceptor concentration, but does not produce an electron concentration as high as 10<sup>17</sup>cm<sup>-3</sup>. © 2004 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60A72C</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="03" i2="3"><s0>001B70B20F</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C61E</s0></fC02><fC02 i1="05" i2="3"><s0>001B70B20J</s0></fC02><fC02 i1="06" i2="3"><s0>001B70I20R</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6172C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7220F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7220J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7920R</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Méthode MOCVD</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>MOCVD</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Recuit</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Annealing</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Mobilité électron</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Electron mobility</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Densité porteur charge</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Carrier density</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Spectre SIMS</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Secondary ion mass spectra</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fN21><s1>061</s1></fN21><fN47 i1="01" i2="1"><s0>0408M000194</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00A740 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00A740 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:04-0097142
|texte= Annealing-induced-type conversion of GaInNAs
}}
| This area was generated with Dilib version V0.5.77. |  |